Pasternack’s new X band high gain power amplifiers are packaged in a hermetically-sealed metal enclosures and exhibit outstanding performance in high gain, gain flatness, high linearity and wide dynamic range. This excellent power amplifier performance is achieved by using a hybrid microwave integrated circuit design and advanced GaAs pHEMT components. The connectorized SMA amplifier modules are unconditionally stable and include built-in voltage regulation, bias sequencing, and reverse bias protection for added reliability. The over-voltage protection on our high gain RF amplifiers is installed externally for easy repair. These high reliability amplifiers are fully matched internally for 50 Ohm input and output, which eliminates the need for any additional sensitive external RF tuning components.

The new X band high gain power amplifiers from Pasternack are perfectly suited for high linearity applications with frequencies ranging from 8 to 12 GHz. These radio frequency amplifiers offer 30 to 41 dB small signal gain over a temperature range of -30°C and +70°C. These Pasternack high gain amplifiers have excellent gain flatness ranges from 0.50 dB to 1.0 dB and the IP3 output performs up to 44 dBm. Pasternack’s new RF amplifiers are offered in 1 Watt and 4 Watt designs depending on the configuration.